Dimension
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182 silicon wafersDimension :182±0.25mmDoping mode :P-type gallium doped
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210 silicon wafersDimension :210±0.25mmDoping mode :P-type gallium doped
Material Properties
Item | Specification | Testing method |
---|---|---|
Growth mode | CZ | / |
Crystal orientation | <100>±3° | X-ray diffraction method |
Conductivity type | P type | P/N tester |
Dislocation density/cm² | ≤500 | X-ray diffractometer (ASTM F26-1987) |
Item | Growth mode | |
Specification | CZ | |
Testing method | / | |
Item | Crystal orientation | |
Specification | <100>±3° | |
Testing method | X-ray diffraction method | |
Item | Conductivity type | |
Specification | P type | |
Testing method | P/N tester | |
Item | Dislocation density/cm² | |
Specification | ≤500 | |
Testing method | X-ray diffractometer (ASTM F26-1987) |
Electrical Properties
Item | Specification | Testing method |
---|---|---|
Oxygen content | ≤7.5×1017atoms/cm3 | Fourier transform infrared spectrometer |
Carbon content | ≤0.5×1017atoms/cm3 | Fourier transform infrared spectrometer |
Resistivity | 0.4-1.1Ω.cm | Automatic silicon wafer detection equipment |
Minority carrier lifetime | ≥70us | Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method, Transient photoconductance decay method (with injection level: 1E15 cm-3) |
Item | Oxygen content | |
Specification | ≤7.5×1017atoms/cm3 | |
Testing method | Fourier transform infrared spectrometer | |
Item | Carbon content | |
Specification | ≤0.5×1017atoms/cm3 | |
Testing method | Fourier transform infrared spectrometer | |
Item | Resistivity | |
Specification | 0.4-1.1Ω.cm | |
Testing method | Automatic silicon wafer detection equipment | |
Item | Minority carrier lifetime | |
Specification | ≥70us | |
Testing method | Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method, Transient photoconductance decay method (with injection level: 1E15 cm-3) |
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